Clean reconstructed InAs(111) A and B surfaces using chemical treatments and annealing
Identifieur interne : 000171 ( Russie/Analysis ); précédent : 000170; suivant : 000172Clean reconstructed InAs(111) A and B surfaces using chemical treatments and annealing
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Abstract
Well-ordered clean InAs(111) A and B surfaces have been prepared using HCl-isopropanol solutions and characterized using low-energy electron diffraction and photoemission spectroscopy. The as-treated surfaces are covered by a layer containing arsenic and small amounts of InClx. Annealing induces desorption of the overlayer and reveals (2 x 2) and (1 x 1) structures on the A and B surfaces, respectively. For both surfaces, the surface components of the In 4d and As 3d reveal a charge transfer from the electropositive surface indium to the electronegative surface arsenic. The major advantage of this preparation method over conventional thermal cleaning is a significant reduction in the annealing temperature (≃250 °C) thereby avoiding anion evaporation.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Clean reconstructed InAs(111) A and B surfaces using chemical treatments and annealing</title><author><name sortKey="Tereshchenko, O E" uniqKey="Tereshchenko O">O. E. Tereshchenko</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics, Novosibirsk State University, Lavrentiev Av. 13</s1><s2>630090 Novosibirsk</s2><s3>RUS</s3><sZ>1 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>630090 Novosibirsk</wicri:noRegion></affiliation></author><author><name sortKey="Paget, D" uniqKey="Paget D">D. Paget</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Physique de la Matière Condensée, CNRS, Ecole Polytechnique</s1><s2>Palaiseau 91128</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region></placeName></affiliation></author><author><name sortKey="Rowe, A C H" uniqKey="Rowe A">A. C. H. Rowe</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Physique de la Matière Condensée, CNRS, Ecole Polytechnique</s1><s2>Palaiseau 91128</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region></placeName></affiliation></author><author><name sortKey="Berkovits, V L" uniqKey="Berkovits V">V. L. Berkovits</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A.F. loffe Physico-Technical Institute</s1><s2>194021 Saint Petersburg</s2><s3>RUS</s3><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>A.F. loffe Physico-Technical Institute</wicri:noRegion></affiliation></author><author><name sortKey="Chiaradia, P" uniqKey="Chiaradia P">P. Chiaradia</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Dipartimento di Fisica, CNISM Unit and NAST, Università di Roma Tor Vergata</s1><s2>00133 Roma</s2><s3>ITA</s3><sZ>5 aut.</sZ></inist:fA14><country>Italie</country><placeName><settlement type="city">Rome</settlement><region nuts="2">Latium</region></placeName></affiliation></author><author><name sortKey="Doyle, B P" uniqKey="Doyle B">B. P. Doyle</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Laboratorio Nazionale TASC, INFM-CNR, s.s.14, km 163.5 in Area Science Park</s1><s2>34012 Trieste</s2><s3>ITA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Italie</country><wicri:noRegion>34012 Trieste</wicri:noRegion></affiliation></author><author><name sortKey="Nannarone, S" uniqKey="Nannarone S">S. Nannarone</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Laboratorio Nazionale TASC, INFM-CNR, s.s.14, km 163.5 in Area Science Park</s1><s2>34012 Trieste</s2><s3>ITA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Italie</country><wicri:noRegion>34012 Trieste</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="06"><s1>Dipartimento di Ingegneria dei Materiali e dell'Ambiente, Università di Modena e Reggio Emilia and CNISM, Via Vignolese 905</s1><s2>41100 Modena</s2><s3>ITA</s3><sZ>7 aut.</sZ></inist:fA14><country>Italie</country><wicri:noRegion>41100 Modena</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">09-0148134</idno><date when="2009">2009</date><idno type="stanalyst">PASCAL 09-0148134 INIST</idno><idno type="RBID">Pascal:09-0148134</idno><idno type="wicri:Area/Main/Corpus">005979</idno><idno type="wicri:Area/Main/Repository">005837</idno><idno type="wicri:Area/Russie/Extraction">000171</idno></publicationStmt><seriesStmt><idno type="ISSN">0039-6028</idno><title level="j" type="abbreviated">Surf. sci.</title><title level="j" type="main">Surface science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>Chemical treatment</term><term>Indium arsenides</term><term>Inorganic compounds</term><term>LEED</term><term>Passivation</term><term>Photoemission</term><term>Semiconductor materials</term><term>Soft X radiation</term><term>Surface treatments</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Traitement surface</term><term>Traitement chimique</term><term>Recuit</term><term>Passivation</term><term>LEED</term><term>Rayon X mou</term><term>Photoémission</term><term>Arséniure d'indium</term><term>Semiconducteur</term><term>As In</term><term>InAs</term><term>Composé minéral</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Well-ordered clean InAs(111) A and B surfaces have been prepared using HCl-isopropanol solutions and characterized using low-energy electron diffraction and photoemission spectroscopy. The as-treated surfaces are covered by a layer containing arsenic and small amounts of InCl<sub>x</sub>. Annealing induces desorption of the overlayer and reveals (2 x 2) and (1 x 1) structures on the A and B surfaces, respectively. For both surfaces, the surface components of the In 4d and As 3d reveal a charge transfer from the electropositive surface indium to the electronegative surface arsenic. The major advantage of this preparation method over conventional thermal cleaning is a significant reduction in the annealing temperature (≃250 °C) thereby avoiding anion evaporation.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0039-6028</s0></fA01><fA02 i1="01"><s0>SUSCAS</s0></fA02><fA03 i2="1"><s0>Surf. sci.</s0></fA03><fA05><s2>603</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Clean reconstructed InAs(111) A and B surfaces using chemical treatments and annealing</s1></fA08><fA11 i1="01" i2="1"><s1>TERESHCHENKO (O. E.)</s1></fA11><fA11 i1="02" i2="1"><s1>PAGET (D.)</s1></fA11><fA11 i1="03" i2="1"><s1>ROWE (A. C. H.)</s1></fA11><fA11 i1="04" i2="1"><s1>BERKOVITS (V. L.)</s1></fA11><fA11 i1="05" i2="1"><s1>CHIARADIA (P.)</s1></fA11><fA11 i1="06" i2="1"><s1>DOYLE (B. P.)</s1></fA11><fA11 i1="07" i2="1"><s1>NANNARONE (S.)</s1></fA11><fA14 i1="01"><s1>Institute of Semiconductor Physics, Novosibirsk State University, Lavrentiev Av. 13</s1><s2>630090 Novosibirsk</s2><s3>RUS</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Physique de la Matière Condensée, CNRS, Ecole Polytechnique</s1><s2>Palaiseau 91128</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>A.F. loffe Physico-Technical Institute</s1><s2>194021 Saint Petersburg</s2><s3>RUS</s3><sZ>4 aut.</sZ></fA14><fA14 i1="04"><s1>Dipartimento di Fisica, CNISM Unit and NAST, Università di Roma Tor Vergata</s1><s2>00133 Roma</s2><s3>ITA</s3><sZ>5 aut.</sZ></fA14><fA14 i1="05"><s1>Laboratorio Nazionale TASC, INFM-CNR, s.s.14, km 163.5 in Area Science Park</s1><s2>34012 Trieste</s2><s3>ITA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="06"><s1>Dipartimento di Ingegneria dei Materiali e dell'Ambiente, Università di Modena e Reggio Emilia and CNISM, Via Vignolese 905</s1><s2>41100 Modena</s2><s3>ITA</s3><sZ>7 aut.</sZ></fA14><fA20><s1>518-522</s1></fA20><fA21><s1>2009</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>12426</s2><s5>354000185493530170</s5></fA43><fA44><s0>0000</s0><s1>© 2009 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>25 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>09-0148134</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Surface science</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Well-ordered clean InAs(111) A and B surfaces have been prepared using HCl-isopropanol solutions and characterized using low-energy electron diffraction and photoemission spectroscopy. The as-treated surfaces are covered by a layer containing arsenic and small amounts of InCl<sub>x</sub>. Annealing induces desorption of the overlayer and reveals (2 x 2) and (1 x 1) structures on the A and B surfaces, respectively. For both surfaces, the surface components of the In 4d and As 3d reveal a charge transfer from the electropositive surface indium to the electronegative surface arsenic. 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